PART |
Description |
Maker |
K9F1G08U0M-FIB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9 |
DSUB DBM25PK 1Gb Gb 1.8V NAND Flash Errata 1Gb的NAND闪存千兆1.8V的勘误表 Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
AT-23065 |
DSub Modular Adapter
|
Assmann Electronics Inc...
|
A-HDS44PP-WP-R |
Waterproof DSub connector
|
Assmann Electronics Inc...
|
TS1GJF150 |
1GB USB2.0 JetFlash垄芒 1GB USB2.0 JetFlash?
|
Transcend Information. Inc. Transcend Information. ...
|
LD242E7800 Q62703-Q3509 LD242 LD242-2 LD242-3 Q627 |
GaAs Infrared Emitter DSUB 11X1 M PCB G30 砷化镓红外发射器
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Siemens Group SIEMENS AG
|
NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb(x8/x16.8/3V28字节页)NAND闪存以及256/512Mb(x16/x32.8V的)LPSDRAM的MCP
|
意法半导 STMicroelectronics N.V.
|
TS1GJF110 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
KFG1G16Q2C |
1Gb OneNAND C-die
|
Samsung Electronics
|
TS1GJF110 |
1GB USB2.0 JetFlash??10
|
Transcend Information. Inc.
|
H5PS1G83NFR |
1Gb DDR2 SDRAM
|
Hynix Semiconductor
|
TS1GJFV10 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|